{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482033","patent":{"patent_number":"US-8482033","title":"High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate","assignee":null,"inventors":[],"filing_date":"2012-09-05T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In one embodiment, a semiconductor structure is provided which includes a base substrate, and a multilayered stack located on the base substrate. The multilayered stack includes, from bottom to top, a first sacrificial material layer having a first thickness, a first semiconductor device layer, a second sacrificial material layer having a second thickness, and a second semiconductor device layer, wherein the first thickness is less than the second thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate","description":"In one embodiment, a semiconductor structure is provided which includes a base substrate, and a multilayered stack located on the base substrate. The multilayered stack includes, from bottom to top, a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482033","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482033","citation_suggestion":"Patentable. \"High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate\" (US-8482033). https://patentable.app/patents/US-8482033","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482033","json":"https://patentable.app/api/llm-context/US-8482033","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:55:50.140Z"}