{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482052","patent":{"patent_number":"US-8482052","title":"Silicon on insulator and thin film transistor bandgap engineered split gate memory","assignee":null,"inventors":[],"filing_date":"2008-03-27T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":22,"abstract":"Thin film transistor memory cells are stackable, and employ bandgap engineered tunneling layers in a junction free, NAND configuration, that can be arranged in 3D arrays. The memory cells have a channel region in a semiconductor strip formed on an insulating layer, a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure having a multilayer structure including at least one layer having a hole-tunneling barrier height lower than that at the interface with the channel region, a charge storage layer disposed above the tunnel dielectric structure, an insulating layer disposed above the charge storage layer, and a gate electrode disposed above the insulating layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon on insulator and thin film transistor bandgap engineered split gate memory","description":"Thin film transistor memory cells are stackable, and employ bandgap engineered tunneling layers in a junction free, NAND configuration, that can be arranged in 3D arrays. The memory cells have a chann","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482052","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482052","citation_suggestion":"Patentable. \"Silicon on insulator and thin film transistor bandgap engineered split gate memory\" (US-8482052). https://patentable.app/patents/US-8482052","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482052","json":"https://patentable.app/api/llm-context/US-8482052","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:46:35.430Z"}