{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482076","patent":{"patent_number":"US-8482076","title":"Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor","assignee":null,"inventors":[],"filing_date":"2009-09-16T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A method forms an integrated circuit structure. The method patterns a protective layer over a first-type field effect transistor and removes a stress liner from above a second-type field effect transistors. Then, the method removes a first-type silicide layer from source and drain regions of the second-type field effect transistor, but leaves at least a portion of the first-type silicide layer on the gate conductor of the second-type field effect transistor. The method forms a second-type silicide layer on the gate conductor and the source and drain regions of the second-type field effect transistor. The second-type silicide layer that is formed is different than the first-type silicide layer. For example, the first-type silicide layer and the second-type silicide layer can comprise different materials, different thicknesses, different crystal orientations, and/or different chemical phases, etc."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor","description":"A method forms an integrated circuit structure. The method patterns a protective layer over a first-type field effect transistor and removes a stress liner from above a second-type field effect transi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482076","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482076","citation_suggestion":"Patentable. \"Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor\" (US-8482076). https://patentable.app/patents/US-8482076","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482076","json":"https://patentable.app/api/llm-context/US-8482076","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:57:06.658Z"}