{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482950","patent":{"patent_number":"US-8482950","title":"Non-volatile semiconductor memory device that changes a load capacitance of a sense node in accordance with a logic value of read information","assignee":null,"inventors":[],"filing_date":"2010-10-27T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A non-volatile semiconductor memory device includes: a memory component in which an electric charge discharging rate between two electrodes is different in accordance with logic of stored information; a sense amplifier that detects the logic of the information by comparing a discharge electric potential of a wiring to which one of the electrodes of the memory component is connected with a reference electric potential; and a load capacitance changing unit that changes load capacitance of a sense node of the sense amplifier to which the discharge electric potential is input or both the load capacitance of the sense node and load capacitance of a reference node of the sense amplifier to which the reference electric potential is input in accordance with the logic of the information read out by the memory component."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile semiconductor memory device that changes a load capacitance of a sense node in accordance with a logic value of read information","description":"A non-volatile semiconductor memory device includes: a memory component in which an electric charge discharging rate between two electrodes is different in accordance with logic of stored information;","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482950","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482950","citation_suggestion":"Patentable. \"Non-volatile semiconductor memory device that changes a load capacitance of a sense node in accordance with a logic value of read information\" (US-8482950). https://patentable.app/patents/US-8482950","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482950","json":"https://patentable.app/api/llm-context/US-8482950","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:51:02.247Z"}