{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482960","patent":{"patent_number":"US-8482960","title":"Multi-bit resistance-switching memory cell","assignee":null,"inventors":[],"filing_date":"2012-02-14T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":5,"abstract":"A non-volatile storage apparatus comprises a set of Y lines, a set of X lines and a plurality of memory cells in communication with the set of X lines and the set of Y lines. Each memory cell of the plurality of memory cells includes a resistance element in a static resistance condition and two or more reversible resistance-switching elements. The resistance element in the static resistance condition and the two or more reversible resistance-switching elements are connected to different Y lines of the set of Y lines. The resistance element in the low resistance state and the two or more reversible resistance-switching elements are connected to a common X line of the set of X lines. One or multiple bits of data are programmed into a particular memory cell of the plurality of memory cells by causing current flow between Y lines connected to the particular memory cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-bit resistance-switching memory cell","description":"A non-volatile storage apparatus comprises a set of Y lines, a set of X lines and a plurality of memory cells in communication with the set of X lines and the set of Y lines. Each memory cell of the p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482960","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482960","citation_suggestion":"Patentable. \"Multi-bit resistance-switching memory cell\" (US-8482960). https://patentable.app/patents/US-8482960","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482960","json":"https://patentable.app/api/llm-context/US-8482960","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:31:40.162Z"}