{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482972","patent":{"patent_number":"US-8482972","title":"Memory devices using a plurality of diodes as program selectors with at least one being a polysilicon diode","assignee":null,"inventors":[],"filing_date":"2011-02-14T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":23,"abstract":"Embodiments of programmable memory cells using a plurality of diodes as program selectors are disclosed for memory cells that can be programmed based on direction of current flow. These memory cells are MRAM, RRAM, CBRAM, or other memory cells that have a programmable resistive element coupled to the P-terminal of a first diode and to the N-terminal of a second diode. At least one of the diodes can be a polysilicon diode fabricated using standard CMOS processes. The polysilicon diode can be constructed by P+/N+ implants on a polysilicon substrate as a program selector."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory devices using a plurality of diodes as program selectors with at least one being a polysilicon diode","description":"Embodiments of programmable memory cells using a plurality of diodes as program selectors are disclosed for memory cells that can be programmed based on direction of current flow. These memory cells a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482972","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482972","citation_suggestion":"Patentable. \"Memory devices using a plurality of diodes as program selectors with at least one being a polysilicon diode\" (US-8482972). https://patentable.app/patents/US-8482972","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482972","json":"https://patentable.app/api/llm-context/US-8482972","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:33:48.956Z"}