{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482973","patent":{"patent_number":"US-8482973","title":"Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material","assignee":null,"inventors":[],"filing_date":"2012-08-07T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A memory cell is provided that includes a first conductor, a second conductor, and a semiconductor junction diode between the first and second conductors. The semiconductor junction diode is not in contact with a material having a lattice mismatch of less than 12 percent with the semiconductor junction diode. In addition, no resistance-switching element having its resistance changed by application of a programming voltage by more than a factor of two is disposed between the semiconductor junction diode and the first conductor or between the semiconductor junction diode and the second conductor. Numerous other aspects are provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material","description":"A memory cell is provided that includes a first conductor, a second conductor, and a semiconductor junction diode between the first and second conductors. The semiconductor junction diode is not in co","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482973","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482973","citation_suggestion":"Patentable. \"Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material\" (US-8482973). https://patentable.app/patents/US-8482973","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482973","json":"https://patentable.app/api/llm-context/US-8482973","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:51:22.446Z"}