{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482988","patent":{"patent_number":"US-8482988","title":"Method of operating a flash EEPROM memory","assignee":null,"inventors":[],"filing_date":"2011-11-08T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"The invention is a new method for operating a flash EEPROM memory device and in particular for programming and erasing the device. The memory device has a first semiconductor region within a second semiconductor region, source and drain regions in the first semiconductor region, a well terminal inside the first semiconductor region, a charge storing layer electrically isolated from the first semiconductor region by a dielectric layer, and a control terminal electrically isolated from the charge storing layer by a inter layer dielectric. The method comprises the steps of: applying a first voltage bias of first polarity to the well terminal; allowing a first time period to elapse; resetting the first voltage bias to zero; while during the either the ramp up or the ramp down phase of said first voltage; applying a second voltage bias of second polarity opposite to the first polarity to the control terminal; allowing a second time period to elapse; and resetting the second voltage bias to zero."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of operating a flash EEPROM memory","description":"The invention is a new method for operating a flash EEPROM memory device and in particular for programming and erasing the device. The memory device has a first semiconductor region within a second se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482988","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482988","citation_suggestion":"Patentable. \"Method of operating a flash EEPROM memory\" (US-8482988). https://patentable.app/patents/US-8482988","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482988","json":"https://patentable.app/api/llm-context/US-8482988","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:45:16.825Z"}