{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8482999","patent":{"patent_number":"US-8482999","title":"Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltage","assignee":null,"inventors":[],"filing_date":"2012-08-31T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":7,"abstract":"Provided is a semiconductor integrated device including a semiconductor memory circuit and a peripheral circuit of the semiconductor memory circuit. The peripheral circuit includes a first transistor having a first voltage as a breakdown voltage of a gate oxide film. The semiconductor memory circuit includes a pair of bit lines, one of the pair of bit lines being connected to a gate transistor of a memory cell, and a precharge circuit that includes a transistor having a breakdown voltage substantially equal to that of the first transistor, and precharges the pair of bit lines to a predetermined voltage in response to an activation signal. The activation signal of the precharge circuit is a second voltage higher than the first voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltage","description":"Provided is a semiconductor integrated device including a semiconductor memory circuit and a peripheral circuit of the semiconductor memory circuit. The peripheral circuit includes a first transistor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8482999","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8482999","citation_suggestion":"Patentable. \"Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltage\" (US-8482999). https://patentable.app/patents/US-8482999","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8482999","json":"https://patentable.app/api/llm-context/US-8482999","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:53:53.342Z"}