{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8483251","patent":{"patent_number":"US-8483251","title":"Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode","assignee":null,"inventors":[],"filing_date":"2011-11-11T00:00:00.000Z","publication_date":"2013-07-09T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L"],"num_claims":24,"abstract":"Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on a (20-21)-plane GaN substrate. A GaN optical guiding layer is grown so as to be lattice-relaxed on the n-type cladding layer. An active layer, a GaN optical guiding layer, an Al0.12Ga0.88N electron blocking layer, and a GaN optical guiding layer are grown so as not to be lattice-relaxed on the optical guiding layer. A p-type Al0.08Ga0.92N cladding layer is grown so as to be lattice-relaxed on the optical guiding layer. A p-type GaN contact layer is grown so as not to be lattice-relaxed on the p-type cladding layer, to produce a semiconductor laser. Dislocation densities at junctions are larger than those at the other junctions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode","description":"Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al0.08Ga0.92N cladding layer is grown s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8483251","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8483251","citation_suggestion":"Patentable. \"Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode\" (US-8483251). https://patentable.app/patents/US-8483251","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8483251","json":"https://patentable.app/api/llm-context/US-8483251","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:01:01.338Z"}