{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486611","patent":{"patent_number":"US-8486611","title":"Semiconductor constructions and methods of forming patterns","assignee":null,"inventors":[],"filing_date":"2010-07-14T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor constructions and methods of forming patterns","description":"Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconn","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486611","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486611","citation_suggestion":"Patentable. \"Semiconductor constructions and methods of forming patterns\" (US-8486611). https://patentable.app/patents/US-8486611","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486611","json":"https://patentable.app/api/llm-context/US-8486611","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:06:12.532Z"}