{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486612","patent":{"patent_number":"US-8486612","title":"Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials","assignee":null,"inventors":[],"filing_date":"2010-11-22T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A cap material may be formed over a photopatternable material on a semiconductor substrate. The cap material absorbs or reflects radiation and protects the photopatternable material from a first wavelength of radiation used in patterning the photoresist layer. Upon exposure to a first wavelength of radiation, the photopatternable material may be converted into a silicon dioxide-based material. The silicon dioxide-based material may be selectively removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials","description":"A cap material may be formed over a photopatternable material on a semiconductor substrate. The cap material absorbs or reflects radiation and protects the photopatternable material from a first wavel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486612","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486612","citation_suggestion":"Patentable. \"Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials\" (US-8486612). https://patentable.app/patents/US-8486612","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486612","json":"https://patentable.app/api/llm-context/US-8486612","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:54:40.505Z"}