{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486777","patent":{"patent_number":"US-8486777","title":"Method for manufacturing microcrystalline semiconductor and thin film transistor","assignee":null,"inventors":[],"filing_date":"2012-01-05T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper electrode includes a shower plate having a plurality of holes formed on a surface of the upper electrode which faces the lower electrode. A substrate is provided over the lower electrode. A gas containing a deposition gas and hydrogen is supplied to the reaction chamber from the shower plate through the hollow portion of the upper electrode, and a rare gas is supplied to the reaction chamber from a portion different from the upper electrode. Accordingly, high-frequency power is supplied to the upper electrode to generate plasma, so that a microcrystalline semiconductor layer is formed over the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing microcrystalline semiconductor and thin film transistor","description":"A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486777","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486777","citation_suggestion":"Patentable. \"Method for manufacturing microcrystalline semiconductor and thin film transistor\" (US-8486777). https://patentable.app/patents/US-8486777","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486777","json":"https://patentable.app/api/llm-context/US-8486777","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:35:57.289Z"}