{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486787","patent":{"patent_number":"US-8486787","title":"Method of fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-03-30T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a semiconductor device includes forming a first contact opening having a relatively larger depth than a second contact opening to expose first and second contacts through an insulation layer, where the first and second contacts are located at different depths with respect to an upper surface of the insulation layer. Therefore, it is possible to prevent excessive over-etch of the second contact opening and minimize etching damage to the contact region exposed by the second contact opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor device","description":"A method of fabricating a semiconductor device includes forming a first contact opening having a relatively larger depth than a second contact opening to expose first and second contacts through an in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486787","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486787","citation_suggestion":"Patentable. \"Method of fabricating semiconductor device\" (US-8486787). https://patentable.app/patents/US-8486787","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486787","json":"https://patentable.app/api/llm-context/US-8486787","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:39:15.267Z"}