{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486789","patent":{"patent_number":"US-8486789","title":"Method for manufacturing insulated gate field effect transistor","assignee":null,"inventors":[],"filing_date":"2008-02-14T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Disclosed herein is a method for manufacturing an insulated gate field effect transistor, the method including the steps of: (a) preparing a base that includes source/drain regions, a channel forming region, a gate insulating film formed on the channel forming region, an insulating layer covering the source/drain regions, and a gate electrode formation opening provided in a partial portion of the insulating layer above the channel forming region; (b) forming a gate electrode by burying a conductive material layer in the gate electrode formation opening; (c) removing the insulating layer; and (d) depositing a first interlayer insulating layer and a second interlayer insulating layer sequentially across an entire surface, wherein in the step (d), the first interlayer insulating layer is deposited in a deposition atmosphere containing no oxygen atom."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing insulated gate field effect transistor","description":"Disclosed herein is a method for manufacturing an insulated gate field effect transistor, the method including the steps of: (a) preparing a base that includes source/drain regions, a channel forming ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486789","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486789","citation_suggestion":"Patentable. \"Method for manufacturing insulated gate field effect transistor\" (US-8486789). https://patentable.app/patents/US-8486789","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486789","json":"https://patentable.app/api/llm-context/US-8486789","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:57:23.730Z"}