{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486791","patent":{"patent_number":"US-8486791","title":"Mufti-layer single crystal 3D stackable memory","assignee":null,"inventors":[],"filing_date":"2011-08-31T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":25,"abstract":"Technology is described herein for manufacturing a three-dimensional 3D stacked memory structure having multiple layers of single crystal silicon or other semiconductor. The multiple layers of single crystal semiconductor are suitable for implementing multiple levels of high performance memory cells."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Mufti-layer single crystal 3D stackable memory","description":"Technology is described herein for manufacturing a three-dimensional 3D stacked memory structure having multiple layers of single crystal silicon or other semiconductor. The multiple layers of single ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486791","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486791","citation_suggestion":"Patentable. \"Mufti-layer single crystal 3D stackable memory\" (US-8486791). https://patentable.app/patents/US-8486791","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486791","json":"https://patentable.app/api/llm-context/US-8486791","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:51:27.655Z"}