{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486805","patent":{"patent_number":"US-8486805","title":"Through-silicon via and method for forming the same","assignee":null,"inventors":[],"filing_date":"2011-04-11T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"A through-silicon via and a method for forming the same are provided. The method includes: providing a semiconductor substrate, the semiconductor substrate including an upper surface and an opposite lower surface; etching the upper surface of the semiconductor substrate to form an opening; filling the opening with a conductive material to form a first nail; etching the lower surface of the semiconductor substrate to form a recess, such that the first nail is exposed at a bottom of the recess; filling the recess with a conductive material that can be etched, and etching the conductive material that can be etched to form a second nail, such that the second nail is vertically connected with the first nail; and filling a gap between the second nail and the semiconductor substrate and a gap between the second nail and an adjacent second nail with a dielectric layer. Then invention can improve the reliability of through-silicon vias and avoid voids."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Through-silicon via and method for forming the same","description":"A through-silicon via and a method for forming the same are provided. The method includes: providing a semiconductor substrate, the semiconductor substrate including an upper surface and an opposite l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486805","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486805","citation_suggestion":"Patentable. \"Through-silicon via and method for forming the same\" (US-8486805). https://patentable.app/patents/US-8486805","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486805","json":"https://patentable.app/api/llm-context/US-8486805","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:15:51.701Z"}