{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486810","patent":{"patent_number":"US-8486810","title":"Method for fabricating a substrate provided with two active areas with different semiconductor materials","assignee":null,"inventors":[],"filing_date":"2011-10-25T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A layer of second semiconductor material is deposited on the layer of first semiconductor material of a substrate. Two active areas are then defined by means of selective elimination of the first and second semiconductor materials. One of the two active areas is then covered by a protective material. The layer of second semiconductor material is then eliminated by means of selective elimination of material. A first active area comprising a main surface made from a first semiconductor material, and a second active area comprising a main surface made from second semiconductor material are thus obtained."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating a substrate provided with two active areas with different semiconductor materials","description":"A layer of second semiconductor material is deposited on the layer of first semiconductor material of a substrate. Two active areas are then defined by means of selective elimination of the first and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486810","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486810","citation_suggestion":"Patentable. \"Method for fabricating a substrate provided with two active areas with different semiconductor materials\" (US-8486810). https://patentable.app/patents/US-8486810","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486810","json":"https://patentable.app/api/llm-context/US-8486810","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:00:42.757Z"}