{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486820","patent":{"patent_number":"US-8486820","title":"Semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2012-01-13T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":10,"abstract":"A semiconductor device manufacturing method includes: forming a first insulating film over the surface of a semiconductor substrate having at least two adjacent protrusions in such a manner that the film thickness between the two protrusions is not less than 1.2 times the height of at least one of the two protrusions; and forming a second insulating film over the first insulating film, the second insulating film being harder than the first insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device manufacturing method","description":"A semiconductor device manufacturing method includes: forming a first insulating film over the surface of a semiconductor substrate having at least two adjacent protrusions in such a manner that the f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486820","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486820","citation_suggestion":"Patentable. \"Semiconductor device manufacturing method\" (US-8486820). https://patentable.app/patents/US-8486820","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486820","json":"https://patentable.app/api/llm-context/US-8486820","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:36:01.810Z"}