{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8486832","patent":{"patent_number":"US-8486832","title":"Method for fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2007-09-10T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":5,"abstract":"A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor device","description":"A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8486832","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8486832","citation_suggestion":"Patentable. \"Method for fabricating semiconductor device\" (US-8486832). https://patentable.app/patents/US-8486832","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8486832","json":"https://patentable.app/api/llm-context/US-8486832","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:12:19.514Z"}