{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8487292","patent":{"patent_number":"US-8487292","title":"Resistance-switching memory cell with heavily doped metal oxide layer","assignee":null,"inventors":[],"filing_date":"2010-07-23T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"A non-volatile resistance-switching memory element includes a resistance-switching element formed from a metal oxide layer having a dopant which is provided at a relatively high concentration such as 10% or greater. Further, the dopant is a cation having a relatively large ionic radius such as 70 picometers or greater, such as Magnesium, Chromium, Calcium, Scandium or Yttrium. A cubic fluorite phase lattice may be formed in the metal oxide even at room temperature so that switching power may be reduced. The memory element may be pillar-shaped, extending between first and second electrodes and being in series with a steering element such as a diode. The metal oxide layer may be deposited at the same time as the dopant. Or, using atomic layer deposition, an oxide of a first metal can be deposited, followed by an oxide of a second metal, followed by annealing to cause intermixing, in repeated cycles."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistance-switching memory cell with heavily doped metal oxide layer","description":"A non-volatile resistance-switching memory element includes a resistance-switching element formed from a metal oxide layer having a dopant which is provided at a relatively high concentration such as ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8487292","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8487292","citation_suggestion":"Patentable. \"Resistance-switching memory cell with heavily doped metal oxide layer\" (US-8487292). https://patentable.app/patents/US-8487292","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8487292","json":"https://patentable.app/api/llm-context/US-8487292","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:42:56.238Z"}