{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8487318","patent":{"patent_number":"US-8487318","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2010-07-20T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon concentration layer formed on a surface layer portion at one side of the semiconductor layer and containing more highly concentrated carbon than a surface layer portion of the other side. Further, a manufacturing method of a semiconductor device of the present invention includes the steps of forming, on a surface layer portion at one face side of a semiconductor layer composed of SiC, a high carbon concentration layer containing more highly concentrated carbon than a surface layer portion at the other face side by heat treatment and directly bonding metal to the high carbon concentration layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon concentration la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8487318","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8487318","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-8487318). https://patentable.app/patents/US-8487318","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8487318","json":"https://patentable.app/api/llm-context/US-8487318","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:46:35.347Z"}