{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8487371","patent":{"patent_number":"US-8487371","title":"Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2011-03-29T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having excellent electrical performance with low drain-to-source resistance RDS(on) include using a two-metal drain contact technique. The RDS(on) is further improved by using a through-silicon-via (TSV) technique to form a drain contact or by using a copper layer closely connected to the drain drift."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same","description":"Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having excellent e","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8487371","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8487371","citation_suggestion":"Patentable. \"Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same\" (US-8487371). https://patentable.app/patents/US-8487371","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8487371","json":"https://patentable.app/api/llm-context/US-8487371","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:29:57.530Z"}