{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8487409","patent":{"patent_number":"US-8487409","title":"Indium phosphide substrate manufacturing method, epitaxial wafer manufacturing method indium phosphide substrate, and epitaxial wafer","assignee":null,"inventors":[],"filing_date":"2010-01-12T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"Affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and eptiaxial wafers whereby deterioration of the electrical characteristics can be kept under control, and at the same time, deterioration of the PL characteristics can be kept under control. An InP substrate manufacturing method of the present invention is provided with the following steps. An InP substrate is prepared (Steps S1 through S3). The InP substrate is washed with sulfuric acid/hydrogen peroxide (Step S5). After the step of washing with sulfuric acid/hydrogen peroxide (Step S5), the InP substrate is washed with phosphoric acid (Step S6)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Indium phosphide substrate manufacturing method, epitaxial wafer manufacturing method indium phosphide substrate, and epitaxial wafer","description":"Affords methods of manufacturing InP substrates, methods of manufacturing epitaxial wafers, InP substrates, and eptiaxial wafers whereby deterioration of the electrical characteristics can be kept und","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8487409","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8487409","citation_suggestion":"Patentable. \"Indium phosphide substrate manufacturing method, epitaxial wafer manufacturing method indium phosphide substrate, and epitaxial wafer\" (US-8487409). https://patentable.app/patents/US-8487409","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8487409","json":"https://patentable.app/api/llm-context/US-8487409","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:14:21.919Z"}