{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8487410","patent":{"patent_number":"US-8487410","title":"Through-silicon vias for semicondcutor substrate and method of manufacture","assignee":null,"inventors":[],"filing_date":"2011-04-13T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A semiconductor component includes a semiconductor substrate having a top surface. An opening extends from the top surface into the semiconductor substrate. The opening includes an interior surface. A first dielectric liner having a first compressive stress is disposed on the interior surface of the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner. A metal barrier layer is disposed on the third dielectric liner. A conductive material is disposed on the metal barrier layer and fills the opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Through-silicon vias for semicondcutor substrate and method of manufacture","description":"A semiconductor component includes a semiconductor substrate having a top surface. An opening extends from the top surface into the semiconductor substrate. The opening includes an interior surface. A","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8487410","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8487410","citation_suggestion":"Patentable. \"Through-silicon vias for semicondcutor substrate and method of manufacture\" (US-8487410). https://patentable.app/patents/US-8487410","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8487410","json":"https://patentable.app/api/llm-context/US-8487410","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:57:40.033Z"}