{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8488361","patent":{"patent_number":"US-8488361","title":"Memory support provided with memory elements of ferroelectric material and improved non-destructive reading method thereof","assignee":null,"inventors":[],"filing_date":"2012-01-12T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":14,"abstract":"A method is for non-destructive reading of an information datum stored in a memory that includes a first wordline, a first bitline and a second bitline, and a first ferroelectric transistor, which is connected between the bitlines and has a control terminal coupled to the first wordline. The method includes applying to the first wordline a first reading electrical quantity, generating a first difference of potential between the first and second bitlines, generating a first output electrical quantity, and applying to the first wordline a second reading electrical quantity. The method further includes generating a second difference of potential between the first and second bitlines, generating a second output electrical quantity, and comparing the first and second output electrical quantities with one another. On the basis of a result of said comparison, the method includes determining the logic value of the information data."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory support provided with memory elements of ferroelectric material and improved non-destructive reading method thereof","description":"A method is for non-destructive reading of an information datum stored in a memory that includes a first wordline, a first bitline and a second bitline, and a first ferroelectric transistor, which is ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8488361","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8488361","citation_suggestion":"Patentable. \"Memory support provided with memory elements of ferroelectric material and improved non-destructive reading method thereof\" (US-8488361). https://patentable.app/patents/US-8488361","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8488361","json":"https://patentable.app/api/llm-context/US-8488361","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:07:23.520Z"}