{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8488362","patent":{"patent_number":"US-8488362","title":"Graded metal oxide resistance based semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2009-04-29T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":16,"abstract":"Memory devices are described along with methods for manufacturing and methods for operating. A memory device as described herein includes a plurality of memory cells located between word lines and bit lines. Memory cells in the plurality of memory cells comprise a diode and a metal-oxide memory element programmable to a plurality of resistance states including a first and a second resistance state, the diode of the memory element arranged in electrical series along a current path between a corresponding word line and a corresponding bit line. The device further includes bias circuitry to apply bias arrangements across the series arrangement of the diode and the memory element of a selected memory cell in the plurality of memory cells."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Graded metal oxide resistance based semiconductor memory device","description":"Memory devices are described along with methods for manufacturing and methods for operating. A memory device as described herein includes a plurality of memory cells located between word lines and bit","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8488362","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8488362","citation_suggestion":"Patentable. \"Graded metal oxide resistance based semiconductor memory device\" (US-8488362). https://patentable.app/patents/US-8488362","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8488362","json":"https://patentable.app/api/llm-context/US-8488362","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:06:53.835Z"}