{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8488372","patent":{"patent_number":"US-8488372","title":"Magnetic random access memory devices including multi-bit cells","assignee":null,"inventors":[],"filing_date":"2011-06-10T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A magnetic random access memory (MRAM) cell includes a storage layer, a sense layer, and a spacer layer between the storage layer and the sense layer. A field line is magnetically coupled to the MRAM cell to induce a magnetic field along a magnetic field axis, and at least one of the storage layer and the sense layer has a magnetic anisotropy axis that is tilted relative to the magnetic field axis. During a write operation, a storage magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, where at least one of the m directions is aligned relative to the magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis. During a read operation, a sense magnetization direction is varied, relative to the storage magnetization direction, to determine the data stored by the storage layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic random access memory devices including multi-bit cells","description":"A magnetic random access memory (MRAM) cell includes a storage layer, a sense layer, and a spacer layer between the storage layer and the sense layer. A field line is magnetically coupled to the MRAM ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8488372","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8488372","citation_suggestion":"Patentable. \"Magnetic random access memory devices including multi-bit cells\" (US-8488372). https://patentable.app/patents/US-8488372","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8488372","json":"https://patentable.app/api/llm-context/US-8488372","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:09:29.560Z"}