{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8488403","patent":{"patent_number":"US-8488403","title":"Sense-amplification with offset cancellation for static random access memories","assignee":null,"inventors":[],"filing_date":"2010-04-08T00:00:00.000Z","publication_date":"2013-07-16T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":15,"abstract":"An offset cancellation scheme for sense amplification is described. The scheme consists of group of transistors which are selectively coupled to high and low voltage levels via multi-phase timing. This results in a voltage level on sensing nodes of interest which are a function of transistor mismatch. The resulting voltage levels act to compensates for the transistor mismatch, thereby improving the reliability of the sense amplifier in the presence of process non-idealities. The offset cancellation scheme is applicable to numerous types of sense amplifiers, amplifiers, and comparators."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Sense-amplification with offset cancellation for static random access memories","description":"An offset cancellation scheme for sense amplification is described. The scheme consists of group of transistors which are selectively coupled to high and low voltage levels via multi-phase timing. Thi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8488403","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8488403","citation_suggestion":"Patentable. \"Sense-amplification with offset cancellation for static random access memories\" (US-8488403). https://patentable.app/patents/US-8488403","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8488403","json":"https://patentable.app/api/llm-context/US-8488403","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:55:18.951Z"}