{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8490279","patent":{"patent_number":"US-8490279","title":"Method of manufacturing an enhanced hard bias layer in thin film magnetoresistive sensors","assignee":null,"inventors":[],"filing_date":"2010-09-24T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["G11B","B82Y","B82Y","G11B","G11B"],"num_claims":14,"abstract":"A method of forming a hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed. A HB layer is formed with easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield is deposited on the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing an enhanced hard bias layer in thin film magnetoresistive sensors","description":"A method of forming a hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed. A HB layer is formed with easy axis growth perpendicular to an underlying seed layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8490279","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8490279","citation_suggestion":"Patentable. \"Method of manufacturing an enhanced hard bias layer in thin film magnetoresistive sensors\" (US-8490279). https://patentable.app/patents/US-8490279","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8490279","json":"https://patentable.app/api/llm-context/US-8490279","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:13:40.466Z"}