{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8491962","patent":{"patent_number":"US-8491962","title":"Method for manufacturing a low-k layer","assignee":null,"inventors":[],"filing_date":"2010-04-02T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"Discloses herein is a method of forming a low-k layer. The method includes the following steps. Tetraalkoxysilane, ethanol, tetraalkylammonium hydroxide and water are mixed in a molar ratio between 1:0.1:0.1:5 and 1:10:0.5:36 to form a first mixture. The first mixture is heated for a period of less than about 36 hours to form a second mixture containing a plurality of non-crystalline silicon-containing particles, wherein each of the non-crystalline silicon-containing particles has a particle size of smaller than about 10 nm. Subsequently, a surfactant is added to the second mixture to form a colloid solution, in which the surfactant has a concentration of about 1-20% by weight of the colloid solution. The colloid solution is coated on a substrate and thereby forming a colloid layer thereon. Then, the colloid layer is heated at a condition sufficient to transform the colloid layer into the low-k layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a low-k layer","description":"Discloses herein is a method of forming a low-k layer. The method includes the following steps. Tetraalkoxysilane, ethanol, tetraalkylammonium hydroxide and water are mixed in a molar ratio between 1:","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8491962","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8491962","citation_suggestion":"Patentable. \"Method for manufacturing a low-k layer\" (US-8491962). https://patentable.app/patents/US-8491962","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8491962","json":"https://patentable.app/api/llm-context/US-8491962","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:45:05.326Z"}