{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492055","patent":{"patent_number":"US-8492055","title":"Method and system for fracturing a pattern using lithography with multiple exposure passes","assignee":null,"inventors":[],"filing_date":"2012-07-13T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["B82Y","B82Y","G06F"],"num_claims":25,"abstract":"In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed. Base dosages for a plurality of exposure passes are set and a multiplicity of shots for the plurality of exposure passes is exposed. The multiplicity of shots comprises two groups: a first group of shots for at least two exposures passes, wherein the union of shots for each exposure pass covers the same area, and where shots within an exposure pass are disjoint; and a second group of shots, where each shot in the second group of shots overlaps a shot in the first group of shots. Each shot in the second group is in one of the plurality of exposure passes. A method for forming a set of patterns on a surface is also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and system for fracturing a pattern using lithography with multiple exposure passes","description":"In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed. Base dosages ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492055","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492055","citation_suggestion":"Patentable. \"Method and system for fracturing a pattern using lithography with multiple exposure passes\" (US-8492055). https://patentable.app/patents/US-8492055","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492055","json":"https://patentable.app/api/llm-context/US-8492055","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:36:28.039Z"}