{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492185","patent":{"patent_number":"US-8492185","title":"Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices","assignee":null,"inventors":[],"filing_date":"2012-07-13T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices","description":"A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492185","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492185","citation_suggestion":"Patentable. \"Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices\" (US-8492185). https://patentable.app/patents/US-8492185","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492185","json":"https://patentable.app/api/llm-context/US-8492185","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:23:02.648Z"}