{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492186","patent":{"patent_number":"US-8492186","title":"Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp","assignee":null,"inventors":[],"filing_date":"2007-12-19T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer (103) is formed on a substrate (101), the method including: a substrate processing step of forming, on the (0001) C-plane of the substrate (101), a plurality of convex parts (12) of surfaces (12c) not parallel to the C-plane, to thereby form, on the substrate, an upper surface (10) that is composed of the convex parts (12) and a flat surface (11) of the C-plane; and an epitaxial step of epitaxially growing the group III nitride semiconductor layer (103) on the upper surface (10), to thereby embed the convex parts (12) in the group III nitride semiconductor layer (103)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp","description":"The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer (103) is formed on a substrate (101), the method","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492186","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492186","citation_suggestion":"Patentable. \"Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp\" (US-8492186). https://patentable.app/patents/US-8492186","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492186","json":"https://patentable.app/api/llm-context/US-8492186","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:08:17.175Z"}