{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492212","patent":{"patent_number":"US-8492212","title":"Thin-film transistor producing method","assignee":null,"inventors":[],"filing_date":"2010-02-17T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["G02F"],"num_claims":7,"abstract":"Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used not only as a mask to protect a channel region (27) when a source electrode and a drain electrode are formed by etching, but also as a mask when ions are implanted to form a source/drain regions (39). Thus, phosphorus, which is ion-implanted in the polycrystalline silicon film (26) to form the source/drain regions (39), is not implanted in the LDD region (38) and, accordingly, it is not necessary to additionally form a resist pattern to be used as a mask when ions are implanted."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thin-film transistor producing method","description":"Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492212","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492212","citation_suggestion":"Patentable. \"Thin-film transistor producing method\" (US-8492212). https://patentable.app/patents/US-8492212","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492212","json":"https://patentable.app/api/llm-context/US-8492212","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:47:02.327Z"}