{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492219","patent":{"patent_number":"US-8492219","title":"Semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2012-06-04T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":17,"abstract":"In a semiconductor device manufacturing method, a first semiconductor region which includes a narrow portion and a wide portion is formed in an upper portion of a semiconductor substrate, a gate insulating film is formed on at least side surfaces of the narrow portion, a gate electrode is formed on the gate insulating film, a mask pattern that covers the wide portion is formed, ion implantation of an impurity is performed with the mask pattern as a mask to form an extension impurity region in the narrow portion, the mask pattern is removed, a heat treatment is performed to activate the impurity, a gate sidewall is formed on a side surface of the gate electrode, epitaxial growth of a semiconductor film is performed on the narrow portion and the wide portion after the formation of the gate sidewall, and source-drain regions is formed on both sides of the gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device manufacturing method","description":"In a semiconductor device manufacturing method, a first semiconductor region which includes a narrow portion and a wide portion is formed in an upper portion of a semiconductor substrate, a gate insul","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492219","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492219","citation_suggestion":"Patentable. \"Semiconductor device manufacturing method\" (US-8492219). https://patentable.app/patents/US-8492219","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492219","json":"https://patentable.app/api/llm-context/US-8492219","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:30:17.519Z"}