{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492223","patent":{"patent_number":"US-8492223","title":"Methods of manufacturing flash memory devices by selective removal of nitrogen atoms","assignee":null,"inventors":[],"filing_date":"2011-04-13T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":11,"abstract":"A method of manufacturing a flash memory device includes: forming a dielectric layer on an active region of a substrate having an isolation region and the active region; forming a floating gate on the dielectric layer; forming an isolation layer in the isolation region; forming a nitride layer including a first nitride layer portion formed on an exposed surface of the floating gate and a second nitride layer portion formed on an exposed surface of the isolation layer; selectively removing nitrogen atoms from the second nitride layer portion of the nitride layer; forming an inter-gate dielectric layer on both the first nitride layer portion and the isolation layer; and forming a control gate on the inter-gate dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of manufacturing flash memory devices by selective removal of nitrogen atoms","description":"A method of manufacturing a flash memory device includes: forming a dielectric layer on an active region of a substrate having an isolation region and the active region; forming a floating gate on the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492223","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492223","citation_suggestion":"Patentable. \"Methods of manufacturing flash memory devices by selective removal of nitrogen atoms\" (US-8492223). https://patentable.app/patents/US-8492223","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492223","json":"https://patentable.app/api/llm-context/US-8492223","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:37:59.266Z"}