{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492250","patent":{"patent_number":"US-8492250","title":"Method for fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-09-01T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A method for forming a polysilicon layer includes forming an amorphous silicon layer over a substrate, performing a first thermal treatment of the amorphous silicon layer by performing an implantation with a gas that includes silicon (Si), and performing a second thermal treatment on the thermally treated layer at a temperature higher than a temperature of the first thermal treatment."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor device","description":"A method for forming a polysilicon layer includes forming an amorphous silicon layer over a substrate, performing a first thermal treatment of the amorphous silicon layer by performing an implantation","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492250","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492250","citation_suggestion":"Patentable. \"Method for fabricating semiconductor device\" (US-8492250). https://patentable.app/patents/US-8492250","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492250","json":"https://patentable.app/api/llm-context/US-8492250","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:13:57.462Z"}