{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492252","patent":{"patent_number":"US-8492252","title":"Three dimensional integration and methods of through silicon via creation","assignee":null,"inventors":[],"filing_date":"2012-03-16T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, forming doped portions of the substrate layer in the first planar area, removing a portion of the photoresist to form a second opening defining a second planar area on the substrate layer, and etching to form a first cavity having a first depth defined by the first opening to expose a first contact in the structure and to form a second cavity defined by the second opening to expose a second contact in the structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three dimensional integration and methods of through silicon via creation","description":"A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, forming doped portions of the substrate layer in the first pla","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492252","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492252","citation_suggestion":"Patentable. \"Three dimensional integration and methods of through silicon via creation\" (US-8492252). https://patentable.app/patents/US-8492252","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492252","json":"https://patentable.app/api/llm-context/US-8492252","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:57:04.500Z"}