{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492260","patent":{"patent_number":"US-8492260","title":"Processes of forming an electronic device including a feature in a trench","assignee":null,"inventors":[],"filing_date":"2010-08-30T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A semiconductor substrate can be patterned to define a trench and a feature. In an embodiment, the trench can be formed such that after filling the trench with a material, a bottom portion of the filled trench may be exposed during a substrate thinning operation. In another embodiment, the trench can be filled with a thermal oxide. The feature can have a shape that reduces the likelihood that a distance between the feature and a wall of the trench will be changed during subsequent processing. A structure can be at least partly formed within the trench, wherein the structure can have a relatively large area by taking advantage of the depth of the trench. The structure can be useful for making electronic components, such as passive components and through-substrate vias. The process sequence to define the trenches and form the structures can be tailored for many different process flows."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Processes of forming an electronic device including a feature in a trench","description":"A semiconductor substrate can be patterned to define a trench and a feature. In an embodiment, the trench can be formed such that after filling the trench with a material, a bottom portion of the fill","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492260","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492260","citation_suggestion":"Patentable. \"Processes of forming an electronic device including a feature in a trench\" (US-8492260). https://patentable.app/patents/US-8492260","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492260","json":"https://patentable.app/api/llm-context/US-8492260","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:38:10.837Z"}