{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492271","patent":{"patent_number":"US-8492271","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2012-02-14T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"An object of the invention is to fully fill a wiring material in via holes formed in a low-hardness interlayer insulating film and a high-hardness interlayer insulating film, respectively, upon forming a Cu wiring in interlayer insulating films by using the dual damascene process. According to the invention, a second interlayer insulating film has therein both a wiring trench and a via hole. The via hole has, at the opening portion thereof, a recess portion having a tapered cross-sectional shape. It is formed by causing the second interlayer insulating film to retreat obliquely downward. The diameter of the opening portion of the via hole therefore becomes greater than the diameter of a region below the opening portion and it becomes possible to fully fill a wiring material in the via hole even if the via hole has a fine diameter."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"An object of the invention is to fully fill a wiring material in via holes formed in a low-hardness interlayer insulating film and a high-hardness interlayer insulating film, respectively, upon formin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492271","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492271","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-8492271). https://patentable.app/patents/US-8492271","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492271","json":"https://patentable.app/api/llm-context/US-8492271","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:51:23.279Z"}