{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492272","patent":{"patent_number":"US-8492272","title":"Passivated through wafer vias in low-doped semiconductor substrates","assignee":null,"inventors":[],"filing_date":"2011-07-29T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":25,"abstract":"A method for forming passivated through wafer vias, passivated through wafer via structures, and passivated through wafer via design structures. The method includes: forming a through wafer via in a semiconductor substrate, the through wafer via comprising an electrical conductor extending from a top of the semiconductor substrate to a bottom surface of the semiconductor substrate; and forming a doped layer abutting all sidewalls of the electrical conductor, the doped layer of a same dopant type as the semiconductor substrate, the concentration of dopant in the doped layer greater than the concentration of dopant in the semiconductor substrate, the doped layer intervening between the electrical conductor and the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Passivated through wafer vias in low-doped semiconductor substrates","description":"A method for forming passivated through wafer vias, passivated through wafer via structures, and passivated through wafer via design structures. The method includes: forming a through wafer via in a s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492272","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492272","citation_suggestion":"Patentable. \"Passivated through wafer vias in low-doped semiconductor substrates\" (US-8492272). https://patentable.app/patents/US-8492272","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492272","json":"https://patentable.app/api/llm-context/US-8492272","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:06:15.470Z"}