{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492273","patent":{"patent_number":"US-8492273","title":"Method for selective deposition of a semiconductor material","assignee":null,"inventors":[],"filing_date":"2011-08-01T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"A method is disclosed comprising providing a substrate comprising an insulating material and a second semiconductor material and pre-treating the substrate with a plasma produced from a gas selected from the group consisting of a carbon-containing gas, a halogen-containing gas, and a carbon-and-halogen containing gas. The method further comprises depositing a first semiconductor material on the pre-treated substrate by chemical vapor deposition, where the first semiconductor material is selectively deposited on the second semiconductor material. The method may be used to manufacture a semiconducting device, such as a microelectromechanical system device, or to manufacture a semiconducting device feature, such as an interconnect."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for selective deposition of a semiconductor material","description":"A method is disclosed comprising providing a substrate comprising an insulating material and a second semiconductor material and pre-treating the substrate with a plasma produced from a gas selected f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492273","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492273","citation_suggestion":"Patentable. \"Method for selective deposition of a semiconductor material\" (US-8492273). https://patentable.app/patents/US-8492273","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492273","json":"https://patentable.app/api/llm-context/US-8492273","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:51:28.272Z"}