{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492275","patent":{"patent_number":"US-8492275","title":"Method to form uniform silicide by selective implantation","assignee":null,"inventors":[],"filing_date":"2011-07-20T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"Methods form an integrated circuit structure by forming at least a portion of a plurality of devices within and/or on a substrate and patterning trenches in an inter-layer dielectric layer on the substrate adjacent the devices. The patterning forms relatively narrow trenches and relatively wide trenches. The methods then perform an angled implant of a compensating material into the trenches. The angle of the angled implant implants a greater concentration of the compensating material in the regions of the substrate at the bottom of the wider trenches relative to an amount of compensating material implanted in the regions of the substrate at the bottom of the narrower trenches. The methods then deposit a metallic material within the trenches and heat the metallic material to form silicide from the metallic material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method to form uniform silicide by selective implantation","description":"Methods form an integrated circuit structure by forming at least a portion of a plurality of devices within and/or on a substrate and patterning trenches in an inter-layer dielectric layer on the subs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492275","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492275","citation_suggestion":"Patentable. \"Method to form uniform silicide by selective implantation\" (US-8492275). https://patentable.app/patents/US-8492275","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492275","json":"https://patentable.app/api/llm-context/US-8492275","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:29:14.290Z"}