{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492281","patent":{"patent_number":"US-8492281","title":"Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate","assignee":null,"inventors":[],"filing_date":"2012-07-24T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":4,"abstract":"A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate","description":"A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492281","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492281","citation_suggestion":"Patentable. \"Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate\" (US-8492281). https://patentable.app/patents/US-8492281","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492281","json":"https://patentable.app/api/llm-context/US-8492281","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:05:37.923Z"}