{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492284","patent":{"patent_number":"US-8492284","title":"Low temperature etchant for treatment of silicon-containing surfaces","assignee":null,"inventors":[],"filing_date":"2011-11-28T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"Embodiments provide methods for etching and depositing silicon materials on a substrate. In one example, the method includes heating a substrate containing a silicon-containing material to a temperature of about 800° C. or less and removing a portion of the silicon-containing material and a contaminant to reveal an exposed surface of the silicon-containing material during an etching process and depositing a silicon-containing layer on the exposed surface of the silicon-containing material during a deposition process. The method further provides conducting the etching and deposition processes in the same chamber and utilizing chlorine gas and a silicon source gas during the etching and deposition processes. In some examples, the silicon-containing material is removed at a rate within a range from about 2 Å per minute to about 20 Å per minute during the etching process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low temperature etchant for treatment of silicon-containing surfaces","description":"Embodiments provide methods for etching and depositing silicon materials on a substrate. In one example, the method includes heating a substrate containing a silicon-containing material to a temperatu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492284","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492284","citation_suggestion":"Patentable. \"Low temperature etchant for treatment of silicon-containing surfaces\" (US-8492284). https://patentable.app/patents/US-8492284","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492284","json":"https://patentable.app/api/llm-context/US-8492284","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:14:04.148Z"}