{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492289","patent":{"patent_number":"US-8492289","title":"Barrier layer formation for metal interconnects through enhanced impurity diffusion","assignee":null,"inventors":[],"filing_date":"2010-09-15T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"A method of forming a barrier layer for metal interconnects of an integrated circuit device includes forming a first cap layer over a top surface of a conductive line of the integrated circuit device in a manner that facilitates a controllable dose of oxygen provided to the top surface of the conductive line, the conductive line comprising a metal formed over a seed layer that is an impurity alloy of the metal; and annealing the integrated circuit device so as to combine diffused impurity atoms of the seed layer with the controllable dose of oxygen, thereby forming an impurity oxide layer at an interface between the first cap layer and the top surface of the conductive line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Barrier layer formation for metal interconnects through enhanced impurity diffusion","description":"A method of forming a barrier layer for metal interconnects of an integrated circuit device includes forming a first cap layer over a top surface of a conductive line of the integrated circuit device ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492289","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492289","citation_suggestion":"Patentable. \"Barrier layer formation for metal interconnects through enhanced impurity diffusion\" (US-8492289). https://patentable.app/patents/US-8492289","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492289","json":"https://patentable.app/api/llm-context/US-8492289","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:57:24.219Z"}