{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492290","patent":{"patent_number":"US-8492290","title":"Fabrication of silicon oxide and oxynitride having sub-nanometer thickness","assignee":null,"inventors":[],"filing_date":"2011-06-21T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a silicon-containing oxide layer that includes providing a chemical oxide layer on a surface of a semiconductor substrate, removing the chemical oxide layer in an oxygen-free environment at a temperature of 1000° C. or greater to provide a bare surface of the semiconductor substrate, and introducing an oxygen-containing gas at a flow rate to the bare surface of the semiconductor substrate for a first time period at the temperature of 1000° C. The temperature is then reduced to room temperature during a second time period while maintaining the flow rate of the oxygen containing gas to provide a silicon-containing oxide layer having a thickness ranging from 0.5 Å to 10 Å."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication of silicon oxide and oxynitride having sub-nanometer thickness","description":"A method of fabricating a silicon-containing oxide layer that includes providing a chemical oxide layer on a surface of a semiconductor substrate, removing the chemical oxide layer in an oxygen-free e","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492290","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492290","citation_suggestion":"Patentable. \"Fabrication of silicon oxide and oxynitride having sub-nanometer thickness\" (US-8492290). https://patentable.app/patents/US-8492290","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492290","json":"https://patentable.app/api/llm-context/US-8492290","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:50:36.639Z"}