{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492291","patent":{"patent_number":"US-8492291","title":"Formation of gate dielectrics with uniform nitrogen distribution","assignee":null,"inventors":[],"filing_date":"2011-09-19T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":22,"abstract":"The present invention provides a method for manufacturing a gate dielectric (710) that includes providing a nitrided dielectric layer (220) over a substrate (120). The nitrided dielectric layer (220) has a nonuniform concentration of nitrogen in a bulk thereof. The nitrided dielectric layer (220) is exposed to oxygen radicals (410), resulting in a reduction of the non-uniformity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Formation of gate dielectrics with uniform nitrogen distribution","description":"The present invention provides a method for manufacturing a gate dielectric (710) that includes providing a nitrided dielectric layer (220) over a substrate (120). The nitrided dielectric layer (220) ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492291","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492291","citation_suggestion":"Patentable. \"Formation of gate dielectrics with uniform nitrogen distribution\" (US-8492291). https://patentable.app/patents/US-8492291","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492291","json":"https://patentable.app/api/llm-context/US-8492291","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:57:14.078Z"}