{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492740","patent":{"patent_number":"US-8492740","title":"Memory element and memory device","assignee":null,"inventors":[],"filing_date":"2008-07-31T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":35,"abstract":"The capability of retaining a resistance value of a stored state and an erased state is improved in a resistance variation-type memory device. A memory layer 5 including a high-resistance layer 2 and an ion source layer 3 is provided between a lower electrode 1 and an upper electrode 4. The ion source layer 3 contains Al (aluminum) as an additive element together with an ion conductive material such as S (sulfur), Se (selenium), and Te (tellurium) (chalcogenide element) and a metal element to be ionized such as Zr (zirconium). Since Al is included in the ion source layer 3, the high-resistance layer which includes Al (Al oxide) is formed on an anode in erasing operation. Thus, a retaining property in a high-resistance state improves, and at the same time, an operating speed is improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory element and memory device","description":"The capability of retaining a resistance value of a stored state and an erased state is improved in a resistance variation-type memory device. A memory layer 5 including a high-resistance layer 2 and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492740","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492740","citation_suggestion":"Patentable. \"Memory element and memory device\" (US-8492740). https://patentable.app/patents/US-8492740","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492740","json":"https://patentable.app/api/llm-context/US-8492740","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:51:00.953Z"}